MF213900 - SEMI MF2139 - Test Method for Measuring Nitrogen Concentration in Silicon Substrates by Secondary Ion Mass Spectrometry Revision:SEMI MF2139-1103 (Reapproved 1121) - Current orgで入手可能となる。初版は1986年発行。前版は1997年9月発行。

orgで入手可能となる。初版は1986年発行。前版は1997年9月発行。

temperature control

This Standard expands testing equipment requirements and capabilities in the areas of the processing state model

SEMI C69-1224 (technical revision)

SEMI M41-0615 (technical revision)

MF213900 - SEMI MF2139 - Test Method for Measuring Nitrogen Concentration in Silicon Substrates by Secondary Ion Mass Spectrometry Revision:SEMI MF2139-1103 (Reapproved 1121) - Current orgで入手可能となる。初版は1986年発行。前版は1997年9月発行。Secondary ion mass spectrometry (SIMS) can measure in un annealed, polished Czochralski (CZ) silicon substrates the nitrogen concentration that may be intentionally introduced to: (1) increase the V G tolerance for grown in defects free region, where V is the pull rate and G is the crystal temperature gradient at the solid liquid interface; (2) increase the void free denuded zone depth and the bulk micro defect density after annealing in hydrogen or