M05400 - SEMI M54 - Guide for Semi-Insulating (SI) GaAs Material Parameters Revision:SEMI M54-0304 - Superseded SEMI G82-0301E (Reapproved 0706)

SEMI G82-0301E (Reapproved 0706)

この仕様は，モールディングコンパウンド中の抽出可能微量異物の定量のための試験方法を定義する。

carriers must be manufactured within the dimensional limits and be dimensionally stable within the specification when used in accordance with manufacturers’ recommendations

SEMI G94 — Specification for Coin-Stack Type Tape Frame Shipping Container for 300 mm Wafer

SEMI E5-94 (technical revision)

M05400 - SEMI M54 - Guide for Semi-Insulating (SI) GaAs Material Parameters Revision:SEMI M54-0304 - Superseded SEMI G82-0301E (Reapproved 0706)1 Purpose 1. 1 Substrates with high electrical resistivity and electron drift mobility are needed to fabricate high performance digital and analog microelectronic devices and circuits. Semi insulating n type gallium arsenide, henceforth termed SI GaAs, has been established worldwide as a preferred substrate material for such applications. 1. 2 The active layers needed for devices are generated either by epitaxy or by ion implantation. The quality of