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B：形状測定を使用した段差法
independent of which process module the current event report represents
Dimensional measurements made with an optical microscope are made on the optical image of the specimen and not directly on the specimen itself
This Guide is applicable to any type of equipment for processing semiconductor units
and in some cases the identity of microscopic surface defects and contaminants that may appear on the wetted surfaces
P02900 - SEMI P29 - Specification for Characteristics Specific to Attenuated Phase Shift Masks and Masks Blanks Revision:SEMI P29-0997 - Superseded B：形状測定を使用した段差法This Specification covers the characteristics specific to attenuated phase shift masks and mask blanks. Referenced SEMI Standards SEMI P1 Specification for Hard Surface Photomask Substrates SEMI P2 Specification for Chrome Thin Films for Hard Surface Photomasks SEMI P22 Guideline for Photomask Defect Classification and Size Definition SEMI P28 Specification for Overlay Metrology Test Patterns for Integrated Circuit Manufacture
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