E18000 - SEMI E180 - Test Method for Measuring Surface Metal Contamination Through ICP-MS of Critical Chamber Components Used in Semiconductor Wafer Processing StdPbc-0225 mechanical characteristics and measurement method

mechanical characteristics and measurement method for the 300 mm wafer tape frame

The purpose of this Specification is to provide the semiconductor industry with support in the identification and elimination of product time waste in the product life cycle within the factory

SEMI E87-0706 (technical revision)

本ガイドは以下について記述する。

SEMI E125-1022 (technical revision)

E18000 - SEMI E180 - Test Method for Measuring Surface Metal Contamination Through ICP-MS of Critical Chamber Components Used in Semiconductor Wafer Processing StdPbc-0225 mechanical characteristics and measurement methodThis Document describes a method for a quantitative analysis for surface trace metal concentration of critical chamber components (CCCs) by using inductively coupled plasma mass spectrometry (ICP MS). This Standard is intended to promote communication between the users and the processing equipment suppliers. It can be also used to facilitate better communication regarding surface metal contamination expectation and its test method between the